Distribution of dislocations in AlN crystals grown on evaporating SiC substrates
نویسندگان
چکیده
منابع مشابه
Self-consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements
Hall effect measurements on undoped Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates were carried out as a function of the temperature (30–300 K) and magnetic field (0–1.4 T). Measurements were carried out under dark and after-illumination conditions. After the dark measurements, the samples were illuminated with a blue light emitting diode for 30 min, and then the same measu...
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ژورنال
عنوان ژورنال: Scientific and Technical Journal of Information Technologies, Mechanics and Optics
سال: 2016
ISSN: 2226-1494
DOI: 10.17586/2226-1494-2016-16-6-1038-1047